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COM150A の電気的特性と機能

COM150AのメーカーはInternational Rectifierです、この部品の機能は「(COM150A - COM450A) Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 COM150A
部品説明 (COM150A - COM450A) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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COM150A Datasheet, COM150A PDF,ピン配置, 機能
COM150A COM350A
COM250A COM450A
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFET IN A TO-254AA PA C K A G E
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
F E AT U R E S
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
PART NUMBER
COM150A
COM250A
COM350A
COM450A
S C H E M ATIC
VDS
100 V
200 V
400 V
500 V
R DS(on)
.070
.100
.32
.42
ID
25 A
20 A
12 A
10 A
POWER RATING
3.1
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3.1- 1
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COM150A pdf, ピン配列
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM350A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
400 V VG S = 0,
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
0.2 1.0 m A VDS = 0.8 Max. Rat., VG S = 0,
TC = 125° C
15 A VD S 2 VDS(on),VG S = 10 V
2.0 2.64 V VG S = 10 V, ID = 8.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.25 .32
VG S = 10 V, ID = 8.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.51 0.67
VG S = 10 V, ID = 8.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
C oss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
6.0
2900
450
150
30
40
80
30
S(W ) VD S 2 VDS(on),ID = 8.0 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 200 V, ID @ 8.0 A
ns Rg =5.0 W ,VG S =10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
VSD Diode Forward Voltage1
tr Reverse Recovery Time
Modified MOSPOWER D
- 15 A
symbol showing
G
the integral P-N
- 60 A
Junction rectifier.
S
-1.6 V TC = 25 C,IS = -15 A, VG S = 0
600 ns TJ = 100 C,IF =IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM450A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
500 V VG S = 0,
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
0.2 1.0 m A VDS = 0.8 Max. Rat., VG S = 0,
TC = 125° C
13 A VD S 2 VDS(on),VG S = 10 V
2.1 2.94 V VG S = 10 V, ID = 7.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.3 0.42
VG S = 10 V, ID = 7.0 A
R DS(on) Static Drain-Source On-State
Resistance1
0.67 0.89
VG S = 10 V, ID = 7.0 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
6.0
2600
280
40
30
46
75
31
S(W ) VD S 2 VDS(on),ID = 7.0 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 210 V, ID @ 7.0 A
ns Rg = 5.0 W ,VG S = 10 V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
VSD Diode Forward Voltage1
tr Reverse Recovery Time
Modified MOSPOWER
- 13 A
symbol showing
G
the integral P-N
- 52 A
Junction rectifier.
D
S
-1.4 V TC = 25 C,IS = -13 A, VG S = 0
700 ns TJ = 150 C,IF =IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.


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