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PDF IRSF3010 Data sheet ( Hoja de datos )
| Número de pieza | IRSF3010 | |
| Descripción | FULLY PROTECTED POWER MOSFET SWITCH | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Provisional Data Sheet No.PD-6.0027A
IRSF3010
FULLY PROTECTED POWER MOSFET SWITCH
General Description:
Rating Summary:
The IRSF3010 is a three terminal monolithic
SMART POWER MOSFET with built in short cir-
cuit, over-temperature, ESD and over-voltage pro-
tections.
The on chip protection circuit latches off the
POWER MOSFET in case the drain current ex-
ceeds 14A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage
is actively clamped at 55V (typical), prior to the
avalanche of POWER MOSFET, thus improving
its performance during turn off with inductive
loads.
The input current requirements are very low
(300uA) which makes the IRSF3010 compatible with
most existing designs based on standard
POWER MOSFETs.
Applications:
n DC Motor Drive
n Solenoid Driver
Vds(clamp)
Rds(on)
Ids(sd)
Tj(sd)
EAS
50 V
80 mΩ
11 A
155 °C
400 mJ
Features:
n Extremely Rugged for Harsh Operating
Environments
n Over Temperature Protection
n Over Current Protection
n Active Drain to Source Clamp
n ESD Protection
n Compatible with standard POWER
MOSFET
n Low Operating Input Current
n Monolithic Construction
n Dual set/reset Threshold Input
Drain
Ta b
IRSF3010
Pin Assignment
Pin 1 - Input
Pin 2 - Drain
Pin 3 - Source
Tab - Drain
3
12
IRSF3010 - Block Diagram
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www.DataSheet4U.com
Source
IRSF3010S
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Available Packages
1 page  
2.50
T = 25°C
2.00
1.50
Rise Time
1.00
0.50 On Delay
0.00
3 4 5 6 7 8 9 10 11
Input Voltage (Volts)
F ig. 9 - Tu rn on characteristics vs Input Voltag e
0.9
T = 25°C
0.8
Off Delay
0.7
0.6
0.5 Fall Time
0.4
0.3
3 4 5 6 7 8 9 10 11
Input Voltage (Volts)
Fig. 11 - T urn off characteristics vs Input Voltage
100
T = 150°C
10
T = 25°C
1
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Source to Drain Voltage (Volts)
Fig. 13 - Source-Drain Diode Forward Voltage
IRSF3010
2.50
2.00
Rise Time
1.50
Vin = 5V
1.00
On Delay
0.50
0.00
-50 -25
0 25 50 75 100 125 150
Temperature (°C)
F ig. 10 - Turn on characteristics vs Temperature
0.9
0.8
0.7 Off Delay
0.6
Vin = 5V
0.5
Fall Time
0.4
0.3
-50 -25
0 25 50 75 100 125 150
Temperature (°C)
Fig. 12 - Turn off characteristics vs Temperature
10
Duty Factor =
0 .5
1
0 .1
0.1
0
DF=
0.50
0.20
0.10
0.05
0.02
0.01
0.00
0.01
1E-05
1E-04
1E-03 1E-02 1E-01 1E+00 1E+01
Pulse Duration tp (S)
Fig. 14 - Tran sien t Thermal Impedan ce, Junction to Case
5
5 Page 
IRSF3010
The typical waveforms at 7V input voltage are shown
in figure 22. In typical switching applications, below
40kHz, the difference in switching losses between the
IRSF3010 and the same size standard MOSFET is
negligible.
Input voltage 5V/
Drain voltage 5V/
Drain Current: 1A/
Time: 1µsV/div.
Fig. 22 Switching waveforms with 7V Input
voltage
Over-current Protection
When the drain current exceeds the preset limit the
protection circuit resets the internal flip-flop and turns
Q1 off. The normal operation can be restored by hold-
ing the input voltage below the specified threshold level
(approx. 1.3V) for the specified minimum treset time.
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 2A/div.
Time: 10µsV/div.
Fig. 23 Waveforms at over-current shut-down
The typical waveforms at over-current shut-down are
shown in figure 23. After turn-on the current in the
inductor at the drain starts ramping up. At about 15A
the over-current protection shuts down the device.
Over-temperature Protection
Figure 24 illustrates the operation of the over-tempera-
ture protection. The IRSF3010 switches a 1Ω resis-
tive load to a 12V power supply. When the thermal
balance is established the junction temperature is lim-
ited on pulse by pulse basis.
Input voltage 10V/div.
Drain voltage 5V/div.
Drain Current: 2A/div.
Time: 10µsV/div.
Fig. 24 Over-temperature shut-down
Over-voltage Protection
When the drain to source voltage exceeds 55V the
zener diode between gate and drain turns the
IRSF3010 on, before the breakdown voltage of the
drain-source diode is reached. This greatly enhances
the energy the device can withstand safely during turn-
off of inductive loads compared to avalanche break-
down. Thus the device can be used for fast de-
energization of inductive loads. The absorbed energy
is limited only by the maximum junction temperature.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/96
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRSF3010.PDF ] | |
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