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IRS2106SPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRS2106SPBF
部品説明 (IRS2106(4)D(S)PbF) High and Low Side Driver
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRS2106SPBF Datasheet, IRS2106SPBF PDF,ピン配置, 機能
IRS2106(4)D(S)PbF
Data Sheet No. PD60241
PRELIMINARY DATASHEET
IRS2106(4)D(S)PbF
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage – dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
Integrated bootstrap diode
Packages
8-Lead SOIC
14-Lead SOIC
8-Lead PDIP
14-Lead PDIP
Description
IRS2106D/IRS2108D/IRS2109D/Feature Comparison
The IRS2106(4)D(S) are high
Cross-
voltage, high speed power MOSFET
Part Input
Conduction
Dead-Time
Ground Pins Ton/Toff
an 1GBT drivers with independent
Logic
Prevention
high and low side referenced output
logic
channels. Proprietary HVIC and latch 2106
COM
immune CMOS technologies enable 21064 HIN/LIN no
none
VSS/COM 515/500
ruggedized monolithic construction.
The logic input is compatible with
Standard CMOS or LSTTL output,
down to 3.3V logic. The output
drivers feature a high pulse current
2108
21084
2109
21094
___
HIN/LIN
___
IN/SD
yes
yes
Internal 540ns
COM
Programmable 0.54- 5us VSS/COM
Internal 540ns
COM
Programmable 0.54- 5us VSS/COM
220/220
750/220
buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side
configuration which operates up to 600 volts.
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(IRS2106(4)D(S)PbF) High and Low Side Driver

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