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C30665のメーカーはPerkinElmer Optoelectronicsです、この部品の機能は「(C306xx) Large-Area InGaAs Photodiodes」です。 |
部品番号 | C30665 |
| |
部品説明 | (C306xx) Large-Area InGaAs Photodiodes | ||
メーカ | PerkinElmer Optoelectronics | ||
ロゴ | |||
このページの下部にプレビューとC30665ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
• F.T.I.R. spectroscopy
EVERYTHING
IN A
NEW
LIGHT.
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
1 Page C30619, C30641, C30642, C30665
Figure 1. Typical Responsivity vs. Wavelength.
Figure 2. Typical Shunt Resistance as a Function of Temperature.
Specifications (at VR = VOP (typical), 22°C)
Parameter
C30642
Min Typ Max
Active Diameter
2.0
Responsivity At 850 nm
0.10 0.20
At 1300 nm
0.80 0.90
At 1550 nm
0.85 0.95
Shunt Resistance (VR = 10 mV) 1
Dark Current
2
25
103
Spectral Noise Current (10 kHz, 1.0 Hz)
0.03 0.15
Capacitance At VR = 0V
At VR = 2.0V (typical)
Bandwidth (-3 dB, RL = 50Ω)
Linearity 2
300 500
150
20
+11
Available package types
D15
C30665
Min Typ Max
3.0
0.10 0.20
0.80 0.90
0.85 0.95
1 10
253
0.04 0.20
1000 1250
400
3.0
+11
D15
Units
mm
A/W
A/W
A/W
MΩ
nA
pA/√Hz
pF
pF
MHz
dBm
-
Operating Ratings
Parameter
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
C30642
Min Typ Max
05
15 50
10
100
250
-60 125
-40 85
C30665
Min Typ Max
05
10 50
10
100
250
-80 125
-40 85
Units
V
V
mA
mA
mW
°C
°C
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
Note 3. At VR = 2.0V
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ C30665 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
C30662 | Large Area InGaAs Avalanche Photodiodes | Excelitas |
C30662-1 | Large Area InGaAs Avalanche Photodiodes | Excelitas |
C30665 | (C306xx) PIN-TYPE PHOTODIODE | Perkin Elmer Optoelectronics |
C30665 | (C306xx) Large-Area InGaAs Photodiodes | PerkinElmer Optoelectronics |