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PDF STE180NE10 Data sheet ( Hoja de datos )
| Número de pieza | STE180NE10 | |
| Descripción | N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STE180NE10
N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STE180NE10
100 V
< 6 mΩ
s TYPICAL RDS(on) = 4.5 mΩ
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
ID
180A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
February 2003
.
Value
100
100
± 20
180
119
540
360
2.88
2500
-55 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STE180NE10
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STE180NE10.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| STE180NE10 | N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET | ST Microelectronics |
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