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IRFZ34VSPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ34VSPBF
部品説明 (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFZ34VSPBF Datasheet, IRFZ34VSPBF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
www.irf.com
PD - 95560
IRFZ34VSPbF
IRFZ34VLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 28m
ID = 30A
S
D2Pak
IRFZ34VS
TO-262
IRFZ34VL
Max.
30
21
120
70
0.46
± 20
30
7.0
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
2.15
40
Units
°C/W
1
07/15/04
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(IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET

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