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IRFZ34NSのメーカーはInternational Rectifierです、この部品の機能は「(IRFZ34NS/L) Power MOSFET」です。 |
部品番号 | IRFZ34NS |
| |
部品説明 | (IRFZ34NS/L) Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFZ34NSダウンロード(pdfファイル)リンクがあります。 Total 10 pages
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
www.DataSheet4U.com
PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.040Ω
ID = 29A
S
D 2 Pak
T O -262
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
––––
––––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page 1000
100
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
IRFZ34NS/L
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
0.1
4 .5V
20µs PULSE W IDTH
TTCJ == 2255°°CC
A
1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
4 .5V
20µs PULSE W IDTH
1
TTCJ = 11755°CC
A
0.1 1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5V
20µs P U LS E W IDT H
1A
4 5 6 7 8 9 10
VG S , G ate-to-Sou rce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
-60 -40 -20 0
VG S = 10V
A
20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFZ34NS/L
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250
ID
TOP 6.5A
11A
200 B OT TO M 16 A
150
100
50
0 VD D = 2 5V
A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRFZ34NS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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