DataSheet.jp

IRFZ34NS の電気的特性と機能

IRFZ34NSのメーカーはInternational Rectifierです、この部品の機能は「(IRFZ34NS/L) Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFZ34NS
部品説明 (IRFZ34NS/L) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFZ34NSダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

IRFZ34NS Datasheet, IRFZ34NS PDF,ピン配置, 機能
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profile through-hole (IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
www.DataSheet4U.com
PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.040
ID = 29A
S
D 2 Pak
T O -262
Max.
29
20
100
3.8
68
0.45
± 20
130
16
5.6
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
––––
––––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

1 Page





IRFZ34NS pdf, ピン配列
1000
100
TOP
BOTT OM
VGS
15 V
1 0V
8 .0V
7 .0V
6 .0V
5 .5V
5 .0V
4.5 V
IRFZ34NS/L
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
0.1
4 .5V
20µs PULSE W IDTH
TTCJ == 2255°°CC
A
1 10 100
VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
10
4 .5V
20µs PULSE W IDTH
1
TTCJ = 1175CC
A
0.1 1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5V
20µs P U LS E W IDT H
1A
4 5 6 7 8 9 10
VG S , G ate-to-Sou rce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
-60 -40 -20 0
VG S = 10V
A
20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFZ34NS 電子部品, 半導体
IRFZ34NS/L
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250
ID
TOP 6.5A
11A
200 B OT TO M 16 A
150
100
50
0 VD D = 2 5V
A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ IRFZ34NS データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFZ34N

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor
IRFZ34N

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRFZ34NL

(IRFZ34NS/L) Power MOSFET

International Rectifier
International Rectifier
IRFZ34NLPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap