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STE48NM60のメーカーはST Microelectronicsです、この部品の機能は「N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET」です。 |
部品番号 | STE48NM60 |
| |
部品説明 | N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTE48NM60ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
STE48NM60
N-CHANNEL 600V - 0.09Ω - 48A ISOTOP
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE48NM60
600V
< 0.11Ω
48 A
TYPICAL RDS(on) = 0.09Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2003
www.DataSheet4U.com
Value
Unit
600 V
600 V
±30 V
48 A
30 A
192 A
450 W
3.57 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1) ISD ≤48A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/8
1 Page ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 22.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 400V, ID = 45A,
VGS = 10V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 400V, ID = 45A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 45A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 45A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 45A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STE48NM60
Min.
Typ.
30
20
96
31
43
Max.
134
Unit
ns
ns
nC
nC
nC
Min.
Typ.
16
23
40
Max.
Unit
ns
ns
ns
Min.
Typ.
508
10
40
650
14
43
Max.
48
192
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
3Pages STE48NM60
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
STE48NM60 | N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET | ST Microelectronics |