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STE40NA60 の電気的特性と機能

STE40NA60のメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 STE40NA60
部品説明 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STE40NA60 Datasheet, STE40NA60 PDF,ピン配置, 機能
TYPE
STE40NA60
STE40NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
600 V
RDS(on)
< 0.135
ID
40 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.12
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
January 1998
Value
600
600
± 30
40
26
160
460
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/5
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STE40NA60 pdf, ピン配列
STE40NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
RG = 4.7
VDD = 480 V
ID = 20 A
VGS = 10 V
ID = 40 A VGS = 10 V
Min.
Typ.
55
95
460
48
217
Max.
75
125
600
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V
RG = 4.7
ID = 40 A
VGS = 10 V
Min.
Typ.
95
30
140
Max.
125
40
180
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage ISD = 40 A
VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 40 A
VR = 100 V
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
40
160
Unit
A
A
1050
31.5
60
1.6
V
ns
µC
A
3/5


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共有リンク

Link :


部品番号部品説明メーカ
STE40NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

ST Microelectronics
ST Microelectronics


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