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STE40NA60のメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR」です。 |
部品番号 | STE40NA60 |
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部品説明 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTE40NA60ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TYPE
STE40NA60
STE40NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
600 V
RDS(on)
< 0.135 Ω
ID
40 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.12 Ω
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
January 1998
Value
600
600
± 30
40
26
160
460
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/5
www.DataSheet4U.com
1 Page STE40NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V
RG = 4.7 Ω
VDD = 480 V
ID = 20 A
VGS = 10 V
ID = 40 A VGS = 10 V
Min.
Typ.
55
95
460
48
217
Max.
75
125
600
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V
RG = 4.7 Ω
ID = 40 A
VGS = 10 V
Min.
Typ.
95
30
140
Max.
125
40
180
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage ISD = 40 A
VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 40 A
VR = 100 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
40
160
Unit
A
A
1050
31.5
60
1.6
V
ns
µC
A
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ STE40NA60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STE40NA60 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST Microelectronics |