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IRLR024Z PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR024Z
部品説明 (IRLU/R024Z) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR024Z Datasheet, IRLR024Z PDF,ピン配置, 機能
PD - 95825A
AUTOMOTIVE MOSFET
Features
n Logic Level
n Advanced Process Technology
n Ultra Low On-Resistance
n 175°C Operating Temperature
n Fast Switching
n Repetitive Avalanche Allowed up to Tjmax
G
IRLR024Z
IRLU024Z
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 58m
ID = 16A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRLR024Z
I-Pak
IRLU024Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
iJunction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
16
11
64
35
0.23
± 16
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
06/21/04

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