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55NF06 の電気的特性と機能

55NF06のメーカーはST Microelectronicsです、この部品の機能は「STP55NF06」です。


製品の詳細 ( Datasheet PDF )

部品番号 55NF06
部品説明 STP55NF06
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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55NF06 Datasheet, 55NF06 PDF,ピン配置, 機能
STB55NF06 STB55NF06-1
STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NF06
www.DataSheet4U.cSoTmB55NF06-1
STB55NF06
STP55NF06FP
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
50 A
50 A
50 A
50 A(*)
s TYPICAL RDS(on) = 0.015
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
s THROUGH-HOLE I²PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX “-1")
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufactur-
ing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
TO-220FP
3
2
1
TO-220
3
2
1
123
I²PAK
TO-262
(Suffix “-1”)
3
1
D²PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
March 2003
.
Value
STP_B55NF06(-1)
STP55NF06FP
60
60
± 20
50 50(*)
35 35(*)
200 200(*)
110 30
0.73
0.2
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD= 30V
1/12

1 Page





55NF06 pdf, ピン配列
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 27.5 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 48 V ID= 55 A VGS= 10V
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SWITCHING OFF
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30V
ID = 27.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Min.
Typ.
16
8
44.5
10.5
17.5
Typ.
36
15
Max.
60
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 55A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 55 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
75
170
4.5
Max.
50
200
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area for
Safe Operating Area for TO-220FP
3/12


3Pages


55NF06 電子部品, 半導体
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
55NF06

N-CHANNEL POWER MOSFET TRANSISTOR

THINKISEMI
THINKISEMI
55NF06

STP55NF06

ST Microelectronics
ST Microelectronics
55NF06

N-CHANNEL POWER MOSFET TRANSISTOR

Thinki Semiconductor
Thinki Semiconductor


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