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MSA-0100 の電気的特性と機能

MSA-0100のメーカーはHewlett-Packardです、この部品の機能は「Cascadable Silicon Bipolar MMIC Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MSA-0100
部品説明 Cascadable Silicon Bipolar MMIC Amplifier
メーカ Hewlett-Packard
ロゴ Hewlett-Packard ロゴ 




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MSA-0100 Datasheet, MSA-0100 PDF,ピン配置, 機能
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
www.DataSheet4U.com
MSA-0100
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 1.3 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX, silicon
bipolar MMIC process which uses
nitride self-alignment, ion implanta-
tion, and gold metallization to
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
Chip Outline[1]
Description
The MSA-0100 is a high performance
silicon bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip. This
MMIC is designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge or
ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS section,
“Chip Use”.
Typical Biasing Configuration
R bias
VCC > 7 V
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
C block
IN
MSA
RFC (Optional)
C block
Vd = 5 V
OUT
5965-9689E
6-242

1 Page





MSA-0100 pdf, ピン配列
MSA-0100 Typical Scattering Parameters[1] (ZO = 50 , TA = 25°C, Id = 17 mA)
Freq.
S11
S21
GHz
Mag
Ang
dB
Mag
Ang
S12 S22
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.3
0.4
0.5
0.6
www.DataSheet4U.com0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
171 19.0
8.91 174 –22.7 .073
2 .10 –11
.07
161 18.9
8.82 169 –22.5 .075
6 .11 –24
.07
152 18.8
8.72 163 –22.3 .077
9 .10 –35
.06
143 18.6
8.56 156 –22.4 .076
12
.11
–44
.06
133 18.5
8.37 151 –22.1 .079
14
.11
–53
.05
115 18.2
8.15 146 –21.9 .080
19
.12
–60
.04
84 17.7
7.68 136 –21.3 .086
22
.12
–75
.04
3 17.1
7.17 126 –20.3 .096
26
.12
–88
.08
–39 15.5
5.95 106 –19.3 .109
32
.10 –107
.12
–76 13.7
4.86
90 –17.9 .127
32
.08 –128
.15 –102 12.2
4.09
82 –16.9 .142
36
.06 –130
.19 –122 10.8
3.47
71 –16.4 .151
36
.06 –125
.25 –137 9.4 2.96 60 –15.6 .165 34 .07 –107
.27 –147 8.2 2.56 51 –15.2 .173 32 .10 –86
.28 –157 7.0 2.24 42 –14.8 .182 29 .13 –80
.28 –171 6.0 2.00 35 –14.4 .190 28 .16 –77
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
MSA-0100
Typical
Performance,
T
A
=
25°C
(unless otherwise noted)
21 25
18
Gain Flat to DC
15
12
20
15
9 10
6
5
3
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
0
0.1
0.3 0.5 1.0
3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 17 mA.
0
10 15 20 25 30
I d (mA)
Figure 2. Power Gain vs. Current.
6
Id = 20 mA
4
Id = 17 mA
2
0
Id = 13 mA
–2
7.0
Id = 13 mA
Id = 17 mA
6.5 Id = 20 mA
6.0
5.5
20
18 GP
16
88
NF
66
44
2 P1 dB
0
–2
–55 –25
+25
+85 +125
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 0.5 GHz, Id = 17 mA.
–4
0.1
0.2 0.3 0.5
1.0 2.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
5.0
0.1
0.2 0.3 0.5
1.0 2.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
6-244


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共有リンク

Link :


部品番号部品説明メーカ
MSA-0100

Cascadable Silicon Bipolar MMIC Amplifier

Hewlett-Packard
Hewlett-Packard
MSA-0104

Cascadable Silicon Bipolar MMIC Amplifier

Hewlett-Packard
Hewlett-Packard


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