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Número de pieza | TC2696 | |
Descripción | 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs | |
Fabricantes | Transcom | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TC2696 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Preliminary
TC2696
January 2002
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
• 2 W Typical Output Power at 2.45 GHz
• 14 dB Typical Linear Power Gain at 2.45 GHz
m• High Linearity:
oIP3 = 43 dBm Typical at 2.45 GHz
.c• High Power Added Efficiency:
Nominal PAE of 43 % at 2.45 GHz
U• Suitable for High Reliability Application
t4• Breakdown Voltage:
BVDGO ≥ 18 V
e• Lg = 0.6 µm, Wg = 5 mm
e• 100 % DC Tested
h• Flange Ceramic Package
PHOTO ENLARGEMENT
SDESCRIPTION
taThe TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices
aare 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
.Dpower amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
wELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
wP1dB
Output Power at 1dB Gain Compression Point , f = 2.45GHz
VDS = 8 V, IDS = 600 mA
w .comGL
Linear Power Gain, f = 2.45GHz
VDS = 8 V, IDS = 600 mA
UIP3
Intercept Point of the 3rd-order Intermodulation, f = 2.45GHz
VDS = 8 V, IDS = 600 mA, *PSCL = 20 dBm
t4PAE Power Added Efficiency at 1dB Compression Power, f = 2.45GHz
eIDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
egm Transconductance at VDS = 2 V, VGS = 0 V
hVP Pinch-off Voltage at VDS = 2 V, ID = 10 mA
SBVDGO Drain-Gate Breakdown Voltage at IDGO =2.5 mA
taRth Thermal Resistance
aNote: * PSCL: Output Power of Single Carrier Level.
MIN
32.5
12
15
TYP
33
14
43
43
1.2
850
-1.7
18
7
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
w.DTRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
ww133
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet TC2696.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC2696 | 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs | Transcom |
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