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PDF IXFH24N50 Data sheet ( Hoja de datos )

Número de pieza IXFH24N50
Descripción (IXFx2xN50) HiPerFET Power MOSFETs
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFH24N50 Hoja de datos, Descripción, Manual

HiPerFETTM
Power MOSFETs
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS ID25 RDS(on)
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
rr
250
ns
Symbol
mVDSS
oVDGR
.cVGS
V
GSM
UID25
t4IDM
eIAR
heEAR
Sdv/dt
taPD
aT
J
TJM
.DT
stg
TL
wMd
Weight
ww .comSymbol
eet4UVDSS
ShVGS(th)
taIGSS
w.DaIDSS
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
500 V
500 V
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
21
24
26
84
96
104
21
24
26
A
A
A
A
A
A
A
A
A
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
30 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
300 °C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-268 (D3) Case Style
G
S
TO-204 AE (IXFM)
(TAB)
(TAB)
G = Gate,
S = Source,
D
D = Drain,
TAB = Drain
G
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Test Conditions
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
V
4V
±100 nA
200 µA
1 mA
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
ww© 1999 IXYS All rights reserved
91525H (9/99)

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