DataSheet.es    


PDF IXFH26N50 Data sheet ( Hoja de datos )

Número de pieza IXFH26N50
Descripción (IXFx2xN50) HiPerFET Power MOSFETs
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



Hay una vista previa y un enlace de descarga de IXFH26N50 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! IXFH26N50 Hoja de datos, Descripción, Manual

HiPerFETTM
Power MOSFETs
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS ID25 RDS(on)
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
rr
250
ns
Symbol
mVDSS
oVDGR
.cVGS
V
GSM
UID25
t4IDM
eIAR
heEAR
Sdv/dt
taPD
aT
J
TJM
.DT
stg
TL
wMd
Weight
ww .comSymbol
eet4UVDSS
ShVGS(th)
taIGSS
w.DaIDSS
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
500 V
500 V
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
21
24
26
84
96
104
21
24
26
A
A
A
A
A
A
A
A
A
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
30 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
300 °C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-268 (D3) Case Style
G
S
TO-204 AE (IXFM)
(TAB)
(TAB)
G = Gate,
S = Source,
D
D = Drain,
TAB = Drain
G
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Test Conditions
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
V
4V
±100 nA
200 µA
1 mA
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
ww© 1999 IXYS All rights reserved
91525H (9/99)

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet IXFH26N50.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IXFH26N50(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz SwitchingIXYS Corporation
IXYS Corporation
IXFH26N50(IXFx2xN50) HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation
IXFH26N50PAvalanche Rated Fast Instrinsic DiodeIXYS Corporation
IXYS Corporation
IXFH26N50QHiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar