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K3299のメーカーはNECです、この部品の機能は「MOSFET ( Transistor ) - 2SK3299」です。 |
部品番号 | K3299 |
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部品説明 | MOSFET ( Transistor ) - 2SK3299 | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとK3299ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
•Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A)
•Avalanche capability ratings
•Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
600 V
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±10 A
±40 A
Total Power Dissipation (TA = 25°C) PT1
1.5 W
Total Power Dissipation (TC = 25°C) PT2
75 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Single Avalanche Current Note2
IAS
10 A
Single Avalanche Energy Note2
EAS
66.7 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14060EJ1V0DS00 (1st edition)
The mark • shows major revised points.
©
1999,2000
Date Published April 2000 NS CP(K)
Printed in Japan
1 Page www.DataSheet4U.com
• TYPICAL CHARACTERISTICS (TA = 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
Pulsed
25
VGS = 10 V
8.0 V
6.0 V
20
15
10
5
0
0 10 20 30 40
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
5.0
4.0
3.0
2.0
1.0
VDS = 10 V
ID = 1 mA
0
−50
0
50 100
Tch - Channel Temperature - ˚C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3.0 Pulsed
2.0
ID = 10 A
1.0 5.0 A
0
0 5 10 15
VGS - Gate to Source Voltage - V
2SK3299
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
0
Tch = 125 ˚C
75 ˚C
25 ˚C
−25 ˚C
VDS = 10 V
Pulsed
5 10 15
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
Tch = −25 ˚C
10 25 ˚C
75 ˚C
125 ˚C
1
0.1
0.1
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
3.0
2.0
1.0
0
0
VGS = 10 V
20 V
1.0 10
ID - Drain Current - A
100
Data Sheet D14060EJ1V0DS00
3
3Pages www.DataSheet4U.com
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
10
IAS = 10 A
EAS = 66.7 mJ
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 V → 0 V
0.1 Starting Tch = 25 ˚C
10µ 100µ
1m
L - Inductive Load - H
10m
2SK3299
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120 VDD = 150 V
RG = 25 Ω
100
VGS = 20 V→0 V
IAS ≤ 10 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D14060EJ1V0DS00
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ K3299 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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