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IXFN100N25 の電気的特性と機能

IXFN100N25のメーカーはIXYS Corporationです、この部品の機能は「N-Channel Enhancement Mode Avalanche Rated」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN100N25
部品説明 N-Channel Enhancement Mode Avalanche Rated
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN100N25 Datasheet, IXFN100N25 PDF,ピン配置, 機能
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 100N25
VDSS =
ID25 =
=RDS(on)
250 V
100 A
27 mW
trr £ 250 ns
Symbol
VDSS
V
DGR
VGS
V
GSM
I
D25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
250 V
250 V
±20 V
±30 V
100 A
400 A
100 A
64 mJ
3J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
250 V
2 4V
±200 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
27 mW
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98625A (6/99)
1-2

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共有リンク

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部品番号部品説明メーカ
IXFN100N20

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFN100N25

N-Channel Enhancement Mode Avalanche Rated

IXYS Corporation
IXYS Corporation


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