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H8050 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H8050
部品説明 NPN SILICON TRANSISTOR
メーカ Shantou Huashan Electronic Devices
ロゴ Shantou Huashan Electronic Devices ロゴ 



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H8050 Datasheet, H8050 PDF,ピン配置, 機能
.comShantou Huashan Electronic Devices Co.,Ltd.
heet4U H8050NPN EPITAXIAL SILICON TRANSISTOR
taS2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
aB PUSH-PULL OPERATION.
w.DABSOLUTE MAXIMUM RATINGSTa=25℃)
wwTstg——Storage Temperature………………………… -55~150
Tj——Juncttion Temperature…………………………………150
mPC——Collector Dissipation…………………………………1W
.coVCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………25V
UVEBO——Emitter-Base Voltage………………………………6V
t4IC——Collector Current………………………………………1.5A
TO-92
1EmitterE
2BaseB
3CollectorC
eeELECTRICAL CHARACTERISTICSTa=25℃)
hSymbol
SICBO
taIEBO
aHFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
.DVBE
VCE(sat
wVBE(sat)
wBVCBO
wBVCEO
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Min Typ Max Unit
Test Conditions
0.1 μA VCB=35V, IE=0
0.1 μA VEB=6V, IC=0
85 500
VCE=1V, IC=100mA
40 VCE=1V, IC=800mA
1 V VCE=1V, IC=10mA
0.5 V IC=800mA, IB=80mA
1.2 V IC=800mA,IB=80mA
40 V IC=100μAIE=0
25 V IC=2mAIB=0
BVEBO
Cob
fT
Emitter- Base Breakdown Voltage
Output Capacacitance
Current Gain-Bandwidth Product
hFE Classification
B
85160
C
120200
6
9.0
100
D
160300
mV
.copF
UMHz
IE=100μAIC=0
VCB=10V,IE=0f=1MHz
VCE=10V, IC=50mA
taSheet4E
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