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PDF D2020UK.02 Data sheet ( Hoja de datos )
| Número de pieza | D2020UK.02 | |
| Descripción | METAL GATE RF SILICON FET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D2020UK.02 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MEwCDwHAwN87 .IDCAaLtaDAASThAee12t4U.com N
CB
P
TetraFET
D2020UK.02
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
63
5W – 28V – 1GHz5 4
SINGLE ENoDmEDH
.cK
UL
t4J
M
E
FG
eSO8 PACKAGE
ePIN 1 – SOURCE
PIN 2 – DRAIN
hPIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
taSDim.
A
B
aC
D
E
.DF
G
H
wJ
wK
wL
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0°
7°
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
M 0.20 ±0.08 0.008 ±0.003
mN
2.18
Max.
0.086
Max.
oP 4.57 ±0.08 0.180 ±0.003
t4U.cABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
ePD Power Dissipation
30W
heBVDSS
Drain – Source Breakdown Voltage *
65V
taSBVGSS
Gate – Source Breakdown Voltage*
±20V
aID(sat)
Drain Current
2A
.DTstg Storage Temperature
–65 to 150°C
wTj Maximum Operating Junction Temperature
200°C
wwSemelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 1/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2020UK.02.PDF ] | |
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