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C30810 の電気的特性と機能

C30810のメーカーはPerkinElmer Optoelectronicsです、この部品の機能は「(C30807 - C30831) N-Type Silicon PIN Photodetectors」です。


製品の詳細 ( Datasheet PDF )

部品番号 C30810
部品説明 (C30807 - C30831) N-Type Silicon PIN Photodetectors
メーカ PerkinElmer Optoelectronics
ロゴ PerkinElmer Optoelectronics ロゴ 




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C30810 Datasheet, C30810 PDF,ピン配置, 機能
N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING
IN A
NEW
LIGHT.
Description
Features
This family of N-type silicon p-i-n
photodiodes is designed for use in a wide
variety of broad band low light level
applications covering the spectral range
from below 400 to over 1100 nm.
The different types making up this series
provide a broad choice in photosensitive
areas and in time response
characteristics. Each of the types is
antireflection coated to enhance
responsivity at 900 nm.
• Broad Range of Photosensitive Surface Areas
0.2 mm2 to 100 mm2
• Low Operating Voltage VR = 45V
• Anti-Reflection Coated to Enhance Responsivity at 900 nm
• Hermetically-Sealed Packages
• Spectral Response Range 400 to 1100 nm
Maximum Ratings, Absolute-Maximum Values (All Types)
These characteristics make the devices
highly useful in HeNe and GaAs laser
detection systems and in optical
demodulation, data transmission, ranging,
and high-speed switching applications.
DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V
Photocurrent Density, jp at 22°C:
Average value, continuous operation . . . . . . . . . .5 mA/mm2
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2
Forward Current, IF:
Average value, continuous operation . . . . . . . . . .10 max. mA
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA
Ambient Temperature:
Storage, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100°C
Operating, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80°C
Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200°C

1 Page





C30810 pdf, ピン配列
C30807, C30808, C30809, C30810, C30822, C30831
Figure 1. Typical Spectral Responsivity Characteristic
Figure 2. Typical Dark Current vs. Ambient Temperature
SEupnleelcectsirfsiiccoaatlthiCoehnrwasri(asacettseVprRies=ctiic4fis5edaVtoTltAs=(t2y2p°icCaAl),t
a DC Reverse
22°C)2
Operating
Voltage
(VR)
=
45
Volts2,
Type C30810
Min Typ Max
Type C30822
Min Typ Max
Type C30831
Min Typ Max
Units
Breakdown Voltage, VBR
Responsivity:
100 -
- 100 -
- 100
At 900 nm
0.5 0.6
-
0.5 0.6
-
0.5
At 1060 nm
0.1 0.15
-
0.1 0.15
-
0.1
Quantum Efficiency:
At 900 nm
70 83
-
- 83 -
-
At 1060 nm
12 17
-
- 17 -
-
Dark Current, id: See Figure 2
At VR = 10V
At VR = 45V
Noise Current, In: See Figure 3
f = 1000 Hz, f = 1.0 Hz
-
-
-
8x10-8 4x10-7
3x10-7 1.5x10-6
-
-
1x10-8 5x10-8
5x10-8 2.5x10-7
3x10-13 2.1x10-12 - 1.3x10-13 9x10-13
-
-
-
Noise Equivalent Power (NEP):
f = 1000 Hz, f = 1.0 Hz
At 900 nm
- 4.5x10-13 3.6x10-12 -
2x10-13 1.5x10-12
-
At 1060 nm
- 2x10-12 1.6x10-11 - 8x10-13 7x10-12 1
Capacitance, Cd: See Figure 4 - 70 90 - 17 20 -
Rise Time, tr:
RL = 50 Ω, λ = 900 nm,
10% to 90% points
- 12 17 -
7 12
-
Fall Time:
RL = 50 Ω, λ = 900 nm,
10% to 90% points
- 20 30 - 10 15 -
--
V
0.6 -
0.15 -
A/W
A/W
83 -
17 -
%
%
1x10-9 5x10-9
1x10-8 5x10-8
A
A
6x10-14 4.2x10-13 A/Hz1/2
1x10-13 8x10-13
4x10-13 3.2x10-12
2 2.5
W/Hz1/2
W/Hz1/2
pF
35
ns
6 10
ns
Note 2. The recommended range of reverse operating voltage VR at TA = 22°C is 0 to 50 volts. However, when the devices are operated in the photovoltaic mode, i.e., at VR = 0
volts, some of the electrical characteristics will differ from those shown.


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共有リンク

Link :


部品番号部品説明メーカ
C30810

(C30807 - C30831) N-Type Silicon PIN Photodetectors

PerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30817

PhotoDiode

RCA
RCA
C30817E

(C30xxx) PhotoDiode

Perkin Elmer Optoelectronics
Perkin Elmer Optoelectronics


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