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PDF G30N60 Data sheet ( Hoja de datos )
| Número de pieza | G30N60 | |
| Descripción | HGTG30N60 | |
| Fabricantes | ETC | |
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Data Sheet
HGTG30N60A4
August 2003
File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4
TO-247
G30N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1
1 page  
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HGTG30N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
220
RG = 3Ω, L = 200µH, VCE = 390V
200 VGE = 12V, VGE = 15V, TJ = 125oC
180
160
140
120
0
VGE = 12V, VGE = 15V, TJ = 25oC
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 3Ω, L = 200µH, VCE = 390V
60
TJ = 125oC, VGE = 12V OR 15V
50
40
TJ = 25oC, VGE = 12V OR 15V
30
20
0 10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
60
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250µs
250
TJ = 25oC
200
TJ = 125oC
150
TJ = -55oC
100
50
0
6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
12
15.0
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
12.5
10.0
VCE = 600V
VCE = 400V
7.5
VCE = 200V
5.0
2.5
0
0 50 100 150 200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
250
5
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 60A
3
2
ICE = 30A
1 ICE = 15A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
0
3 10
ICE = 15A
100
300
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G30N60.PDF ] | |
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