(PDF) 11ES4 Datasheet - Low Forward Voltage Drop Diode

Número de pieza	11ES4
Descripción	Low Forward Voltage Drop Diode
Fabricantes	Nihon Inter Electronics
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No Preview Available ! DIODE Type : 11ES4 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 0.98 1.0 45 11ES4 400 600 Ta=25°C 1 50Hz Half Sine Ta=50°C 2 Wave Resistive Load 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Reverse Current IRM Tj= 25°C, VRM= VRRM - - 50 µA Peak Forward Voltage VFM Tj= 25°C, IFM= 1.0A - - 1.0 V Thermal Resistance Rth(j-a) Junction to Ambient 1 2 - - 140 110 °C/W 1:Without Fin or P.C. Board 2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides) 1 page

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PDF 11ES4 Data sheet ( Hoja de datos )