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PDF C30902E Data sheet ( Hoja de datos )
| Número de pieza | C30902E | |
| Descripción | (C309xxx) Silicon Avalanche Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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Description
Silicon Avalanche Photodiodes
PerkinElmer Type C30902E avalanche
photodiode utilizes a silicon detector chip
fabricated with a double-diffused "reach-
through" structure. This structure provides
high responsivity between 400 and 1000 nm
as well as extremely fast rise and fall times
at all wavelengths. Because the fall time
characteristics have no "tail”, the
responsivity of the device is independent of
modulation frequency up to about 800 MHz.
The detector chip is hermetically-sealed
behind a flat glass window in a modified TO-
18 package. The useful diameter of the
photosensitive surface is 0.5 mm.
PerkinElmer Type C30921E utilizes the
same silicon detector chip as the C30902E,
but in a package containing a lightpipe
which allows efficient coupling of light to the
detector from either a focussed spot or an
optical fiber up to 0.25 mm in diameter. The
internal end of the lightpipe is close enough
to the detector surface to allow all of the
illumination exiting the lightpipe to fall within
the active-area of the detector. The
hermetically-sealed TO-18 package allows
fibers to be epoxied to the end of the
lightpipe to minimize signal losses without
fear of endangering detector stability.
C30902E, C30902S, C30921E, C30921S
High Speed Solid State Detectors for
Fiber Optic and Very Low Light-Level Applications
Features
• High Quantum Efficiency 77% Typical at 830 nm
• C30902S and C30921S in Geiger Mode:
Single-Photon Detection Probability to 50%
Low Dark-Count Rate at 5% Detection Probability - Typically
15,000/second at +22°C
350/second at -25°C
Count Rates to 2 x 106/second
• Hermetically Sealed Package
• Low Noise at Room Temperature
C30902E, C30921E - 2.3 x 10-13 A/Hz1/2
C30902S, C30921S - 1.1 x 10-13 A/Hz1/2
• High Responsivity - Internal Avalanche Gains in Excess of 150
• Spectral Response Range - (10% Points) 400 to 1000 nm
• Time Response - Typically 0.5 ns
• Wide Operating Temperature Range - -40°C to +70°C
The C30902E and C309021E are designed
for a wide variety of uses including optical
communications at data rates to 1
GBit/second, laser range-finding, and any
other applications requiring high speed
and/or high responsivity.
EVERYTHING
IN A
NEW
LIGHT.
1 page  
C30902E, C30902S, C30921E, C30921S
Figure 10. Load Line for C30921S in the Geiger Mode
Figure 11. Typical Dark Count vs. Temperature at 5% Photon (830 nm)
Detection Efficiency
Figure 12. Chance of an After-Pulse within the Next 100 ns vs. Delay-Time in
an Actively Quenched Circuit. (Typical for C30902S, C30921S at VBR + 25)
Modified TO-18 Package.
Note: Optical distance is defined as the distance from the surface of the silicon
chip to the front surface of the window.
Figure 13. Dimensional Outline - C30902E, C30902S, C30921E, C30921S
Dimensions in millimeters. Dimensions in parentheses are in inches.
Figure 14. Cutaway of the C30921E, C30921S
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet C30902E.PDF ] | |
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