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LM4250CMのメーカーはNational Semiconductorです、この部品の機能は「Programmable Operational Amplifier」です。 |
部品番号 | LM4250CM |
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部品説明 | Programmable Operational Amplifier | ||
メーカ | National Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとLM4250CMダウンロード(pdfファイル)リンクがあります。 Total 12 pages
May 1998
LM4250
Programmable Operational Amplifier
General Description
The LM4250 and LM4250C are extremely versatile program-
mable monolithic operational amplifiers. A single external
master bias current setting resistor programs the input bias
current, input offset current, quiescent power consumption,
slew rate, input noise, and the gain-bandwidth product. The
device is a truly general purpose operational amplifier.
The LM4250C is identical to the LM4250 except that the
LM4250C has its performance guaranteed over a 0˚C to
+70˚C temperature range instead of the −55˚C to +125˚C
temperature range of the LM4250.
Features
n ±1V to ±18V power supply operation
n 3 nA input offset current
n Standby power consumption as low as 500 nW
n No frequency compensation required
n Programmable electrical characteristics
n Offset voltage nulling capability
n Can be powered by two flashlight batteries
n Short circuit protection
Connection Diagrams
Metal Can Package
Dual-In-Line Package
Top View
DS009300-2
Ordering Information
Temperature Range
Military
Commercial
−55˚C ≤ TA ≤ +125˚C
0˚C ≤ TA ≤ +70˚C
LM4250CN
LM4250CM
LM4250J
LM4250J-MIL
LM4250H
LM4250H-MIL
LM4250CH
Package
8-Pin
Molded DIP
8-Pin
Surface Mount
8-Pin
Ceramic DIP
8-Pin
Metal Can
NSC
Package
Number
N08E
M08A
J08E
H08C
Top View
DS009300-5
© 1999 National Semiconductor Corporation DS009300
www.national.com
1 Page Resistor Biasing
Set Current Setting Resistor to V−
VS
±1.5V
±3.0V
±6.0V
±9.0V
±12.0V
±15.0V
0.1 µA
25.6 MΩ
55.6 MΩ
116 MΩ
176 MΩ
236 MΩ
296 MΩ
ISET
0.5 µA
1.0 µA
5.04 MΩ
2.5 MΩ
11.0 MΩ
5.5 MΩ
23.0 MΩ 11.5 MΩ
35.0 MΩ 17.5 MΩ
47.0 MΩ 23.5 MΩ
59.0 MΩ 29.5 MΩ
5 µA
492 kΩ
1.09 MΩ
2.29 MΩ
3.49 MΩ
4.69 MΩ
5.89 MΩ
10 µA
244 kΩ
544 kΩ
1.14 MΩ
1.74 MΩ
2.34 MΩ
2.94 MΩ
Electrical Characteristics
LM4250 (−55˚C ≤ TA ≤ +125˚C unless otherwise specified.) TA = TJ
Parameter
Conditions
VOS
IOS
Ibias
Large Signal Voltage
Gain
Supply Current
Power Consumption
VOS
IOS
Ibias
Input Voltage Range
Large Signal Voltage Gain
Output Voltage Swing
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
RS ≤ 100 kΩ, TA = 25˚C
TA = 25˚C
TA = 25˚C
RL = 100 kΩ, TA = 25˚C
VO = ±0.6V, RL = 10 kΩ
TA = 25˚C
TA = 25˚C
RS ≤ 100 kΩ
TA = +125˚C
TA = −55˚C
VO = ±0.5V, RL = 100 kΩ
RL = 10 kΩ
RL = 100 kΩ
RL = 10 kΩ
RS ≤ 10 kΩ
RS ≤ 10 kΩ
Parameter
VOS
IOS
Ibias
Large Signal Voltage
Gain
Supply Current
Power Consumption
VOS
IOS
Ibias
Input Voltage Range
Conditions
RS ≤ 100 kΩ, TA = 25˚C
TA = 25˚C
TA = 25˚C
RL = 100 kΩ, TA = 25˚C
VO = ±10V, RL = 10 kΩ
TA = 25˚C
TA = 25˚C
RS ≤ 100 kΩ
TA = +125˚C
TA = −55˚C
VS = ±1.5V
ISET = 1 µA
ISET = 10 µA
Min Max Min Max
3 mV
5 mV
3 nA
10 nA
7.5 nA
50 nA
40k
50k
7.5 µA
80 µA
23 µW
240 µW
4 mV
6 mV
5 nA
10 nA
3 nA
10 nA
7.5 nA
50 nA
±0.6V
±0.6V
30k
30k
±0.6V
±0.6V
70 dB
70 dB
76 dB
76 dB
8 µA
90 µA
VS = ±15V
ISET = 1 µA
ISET = 10 µA
Min Max Min Max
3 mV
5 mV
3 nA
10 nA
7.5 nA
50 nA
100k
100k
10 µA
90 µA
300 µW
2.7 mW
4 mV
6 mV
25 nA
25 nA
3 nA
10 nA
7.5 nA
50 nA
±13.5V
±13.5V
3 www.national.com
3Pages Typical Performance Characteristics (Continued)
Peak to Peak Output Voltage
Swing vs Supply Voltage
Quiescent Current (Iq) vs
Temperature
Quiescent Current (Iq) vs ISET
Slew Rate vs ISET
DS009300-21
DS009300-22
Gain Bandwidth Product
vs ISET
DS009300-23
Open Loop Voltage Gain
vs ISET
DS009300-24
Phase Margin vs ISET
DS009300-25
Input Noise Current (In) and
Voltage (En) vs Frequency
RSET vs ISET
DS009300-26
DS009300-27
DS009300-28
DS009300-29
www.national.com
6
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ LM4250CM データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
LM4250CH | Programmable Operational Amplifier | National Semiconductor |
LM4250CM | Programmable Operational Amplifier | National Semiconductor |
LM4250CN | Programmable Operational Amplifier | National Semiconductor |