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02N60P の電気的特性と機能

02N60PのメーカーはETCです、この部品の機能は「SSM02N60P」です。


製品の詳細 ( Datasheet PDF )

部品番号 02N60P
部品説明 SSM02N60P
メーカ ETC
ロゴ ETC ロゴ 




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02N60P Datasheet, 02N60P PDF,ピン配置, 機能
www.DataSheet4U.com
SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
Fast-switching
Simple drive requirement
Description
G
D
S
TO-220
The TO-220 package is widely preferred for commercial and industrial
applications. The SSM02N60P is well suited for DC/DC and AC/DC
converters in telecom, industrial and consumer applications.
BV DSS
RDS(ON)
ID
G
600V
8Ω
2A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 20
2
1.26
6
39
0.31
130
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
62
Unit
/W
/W
Rev.2.01 6/06/2003
www.SiliconStandard.com
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1 Page





02N60P pdf, ピン配列
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SSM02N60P
1.5
T C =25 o C
1
V G =10V
V G =6.0V
V G =5.5V
V G =5.0V
0.5
V G =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.8 T C =150 o C
0.6
0.4
0.2
V G =10V
V G =6.0V
V G =5.5V
V G =5.0V
V G =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS vs. Junction
Temperature
2.8
I D =1A
2.4 V G =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Rev.2.01 6/06/2003
www.SiliconStandard.com
3 of 6


3Pages


02N60P 電子部品, 半導体
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RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5x RATED VDS
+
10 V
-
S
VGS
VDS
90%
10%
VGS
td(on) tr
SSM02N60P
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
G
S VGS
+
1~ 3 mA
-
II
GD
VG
10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/06/2003
www.SiliconStandard.com
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共有リンク

Link :


部品番号部品説明メーカ
02N60P

SSM02N60P

ETC
ETC
02N60S5

SPN02N60S5

Infineon Technologies
Infineon Technologies


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