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PDF MRF21060R3 Data sheet ( Hoja de datos )
| Número de pieza | MRF21060R3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier
amplifier applications.
• Typical W - CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power — 6.0 Watts
Power Gain — 12.5 dB
Drain Efficiency — 15%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF21060R3
MRF21060SR3
2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060R3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060SR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
- 0.5, +15
180
0.98
- 65 to +150
200
Symbol
RθJC
Value
1.02
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21060R3 MRF21060SR3
1
1 page  
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
40 0
35 η −5
30
25 IRL
20
VDD = 28 Vdc
Pout = 60 W (PEP), IDQ = 500 mA
15 Two−Tone Measurement, 100 kHz Tone Spacing
10 Gps
IMD
5
−10
−15
−20
−25
−30
−35
0 −40
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
VDD = 28 Vdc
40 IDQ = 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
35 15 DTCH
30
−20
−25
−30
−35
25
ACPR
η
20
−40
−45
15 Gps −50
10 −55
5
2 4 6 8 10 12 14
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
Figure 4. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−60
16
−25
−30
VDD = 28 Vdc
f = 2140 MHz
−35 Two−Tone Measurement, 100 kHz Tone Spacing
−40
900 mA
−45
−50
−55 500 mA
700 mA
−60
−65
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
100
14
900 mA
13
700 mA
12
500 mA
11
VDD = 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
10
0.1 1.0 10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 7. Power Gain versus Output Power
−20
VDD = 28 Vdc
−30 IDQ = 700 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−40
3rd Order
−50
−60 5th Order
7th Order
−70
−80
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 6. Intermodulation Distortion Products
versus Output Power
14 −22
Pout = 60 W (PEP), IDQ = 500 mA
f = 2140 MHz
−24
Two−Tone Measurement,
13.5
100 kHz Tone Spacing
−26
IMD
−28
13 −30
Gps
12.5
−32
−34
−36
12 −38
22 24 26 28 30 32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21060R3 MRF21060SR3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF21060R3.PDF ] | |
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