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LM4051AIM3-1.2のメーカーはNational Semiconductorです、この部品の機能は「Precision Micropower Shunt Voltage Reference」です。 |
部品番号 | LM4051AIM3-1.2 |
| |
部品説明 | Precision Micropower Shunt Voltage Reference | ||
メーカ | National Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとLM4051AIM3-1.2ダウンロード(pdfファイル)リンクがあります。 Total 14 pages
February 2000
LM4051
Precision Micropower Shunt Voltage Reference
General Description
Ideal for space critical applications, the LM4051 precision
voltage reference is available in the sub-miniature (3 mm x
1.3 mm) SSOT-23 surface-mount package. The LM4051’s
advanced design eliminates the need for an external stabiliz-
ing capacitor while ensuring stability with any capacitive
load, thus making the LM4051 easy to use. Further reducing
design effort is the availability of a fixed (1.225V) and adjust-
able reverse breakdown voltage. The minimum operating
current is 60 µA for the LM4051-1.2 and the LM4051-ADJ.
Both versions have a maximum operating current of 12 mA.
The LM4051 comes in three grades (A, B, and C). The best
grade devices (A) have an initial accuracy of 0.1%, while the
B-grade have 0.2% and the C-grade 0.5%, all with a tempco
of 50 ppm/˚C guaranteed from −40˚C to 125˚C.
The LM4051 utilizes fuse and zener-zap trim of reference
voltage during wafer sort to ensure that the prime parts have
an accuracy of better than ±0.1% (A grade) at 25˚C.
Features
n Small packages: SSOT-23
n No output capacitor required
n Tolerates capacitive loads
n Reverse breakdown voltage options of 1.225V and
adjustable
Key Specifications (LM4051-1.2)
n Output voltage tolerance
(A grade, 25˚C)
n Low output noise
(10 Hz to 10kHz)
n Wide operating current range
n Industrial temperature range
(tempco guaranteed from
−40˚C to +125˚C)
n Low temperature coefficient
±0.1%(max)
20µVrms
60µA to 12mA
−40˚C to +85˚C
50 ppm/˚C (max)
Applications
n Portable, Battery-Powered Equipment
n Data Acquisition Systems
n Instrumentation
n Process Control
n Energy Management
n Automotive and Industrial
n Precision Audio Components
n Base Stations
n Battery Chargers
n Medical Equipment
n Communication
Connection Diagrams
SSOT-23
DS101222-1
*This pin must be left floating or connected to pin 2.
Top View
See NS Package Number MF03A
DS101222-40
© 2000 National Semiconductor Corporation DS101222
www.national.com
1 Page Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Maximum Output Voltage
(LM4051-ADJ)
Power Dissipation (TA = 25˚C) (Note 2)
M3 Package
Storage Temperature
Lead Temperature
M3 Packages
Vapor phase (60 seconds)
Infrared (15 seconds)
20 mA
10 mA
15V
280 mW
−65˚C to +150˚C
+215˚C
+220˚C
ESD Susceptibility
Human Body Model (Note 3)
2 kV
Machine Model (Note 3)
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Operating Ratings(Notes 1, 2)
Temperature Range
Industrial Temperature Range
Reverse Current
LM4051-1.2
LM4051-ADJ
Output Voltage Range
LM4051-ADJ
(Tmin ≤ TA ≤ Tmax)
−40˚C ≤ TA ≤ +85˚C
60 µA to 12 mA
60 µA to 12 mA
1.24V to 10V
LM4051-1.2
Electrical Characteristics
Boldface limits apply for TA = TJ =
verse Breakdown Voltage tolerances
oTfM±IN0to.1%TM, A±X0;.2a%ll oathnedr ±lim0.i5ts%TrAes=pTecJ t=ive2l5y˚.C.
The
grades
A,
B
and
C
designate
initial
Re-
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4051AIM3
(Limits)
(Note 5)
LM4051BIM3
(Limits)
(Note 5)
LM4051CIM3
Limts
(Note 5)
Units
(Limit)
VR Reverse Breakdown IR = 100 µA
Voltage
1.225
V
Reverse Breakdown
Voltage
Tolerance (Note 6)
IR = 100 µA
±1.2
±5.2
±2.4
±6.4
±6
±10.1
mV (max)
mV (max)
IRMIN
Minimum Operating
Current
39 µA
60 60 60 µA (max)
65 65 65 µA (max)
∆VR/∆T Average Reverse
IR= 10 mA
±20
ppm/˚C
Breakdown
IR = 1 mA
±15
ppm/˚C
Voltage Temperature
Coefficient (Note 6)
IR = 100 µA
∆T = −40˚C to 125˚C
±15
±50
±50
±50 ppm/˚C
(max)
∆VR/∆IR Reverse Breakdown
IRMIN ≤ IR ≤ 1 mA
0.3
mV
Voltage
1.1 1.1 1.1 mV (max)
Change with Operating
1.5 1.5 1.5 mV (max)
Current Change
1 mA ≤ IR ≤ 12 mA
1.8
mV
6.0 6.0 6.0 mV (max)
8.0 8.0 8.0 mV (max)
ZR
Reverse Dynamic
IR = 1 mA, f = 120 Hz
0.5
Impedance
Ω
eN Wideband Noise
∆VR
VHYST
Reverse Breakdown
Voltage
Long Term Stability
(Note 9)
Output Hysteresis
(Note 10)
IR = 100 µA
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
T = 25˚C ±0.1˚C
IR = 100 µA
∆T = −40˚C to 125˚C
20
120
0.36
µVrms
ppm
mV/V
3 www.national.com
3Pages Typical Performance Characteristics (Continued)
Noise Voltage
Reverse Characteristics and
Minimum Operating Current
Start-Up
Characteristics
DS101222-5
DS101222-9
DS101222-8
Reference Voltage vs Output
Voltage and Temperature
DS101222-7
Reference Voltage vs Temperature
and Output Voltage
www.national.com
DS101222-11
6
DS101222-10
6 Page | |||
ページ | 合計 : 14 ページ | ||
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PDF ダウンロード | [ LM4051AIM3-1.2 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
LM4051AIM3-1.2 | Precision Micropower Shunt Voltage Reference | National Semiconductor |