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IRKT142 の電気的特性と機能

IRKT142のメーカーはInternational Rectifierです、この部品の機能は「(IRKT136/142/162) THYRISTOR/DIODE and THYRISTOR/THYRISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRKT142
部品説明 (IRKT136/142/162) THYRISTOR/DIODE and THYRISTOR/THYRISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRKT142 Datasheet, IRKT142 PDF,ピン配置, 機能
Bulletin I27117 rev. C 03/02
THYRISTOR/DIODE and
THYRISTOR/THYRISTOR
SERIES
IRK.136, .142, .162
NEW INT-A-pak Power Modules
Features
High Voltage
Electrically
3500 VRMS
Isolated by DBC Ceramic
Isolating Voltage
(
Al2O3)
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting
UL E78996 approved
Applications
DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control
135 A
140 A
160 A
Major Ratings and Characteristics
CASE STYLE NEW INT-A-PAK
Parameters IRK.136.. IRK.142.. IRK.162.. Units
IT(AV)
@ TC
IT(RMS)
ITSM @ 50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
I2t
VRRM
TJ range
135
85
300
3200
3360
51.5
47
515.5
140
85
310
4500
4712
102
92.5
1013
400 to 1600
- 40 to 125
160
85
355
4870
5100
119
108
1190
A
°C
A
A
A
KA2s
KA2s
KA2s
V
°C
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IRKT142 pdf, ピン配列
Blocking
IRRM Maximum peak reverse and
IDRM off-state leakage current
VINS RMS isolation voltage
dV/dt critical rate of rise of off-state voltage
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
50
3500
1000
mA
V
V/µs
TJ = 125oC
50Hz, circuit to base, all terminals shorted, t = 1s
TJ = TJ max., exponential to 67% rated VDRM
Triggering
Parameter
IRK.136 IRK.142 IRK.162 Units Conditions
PGM Max. peak gate power
PG(AV) Max. average gate power
IGM
-VGT
Max. peak gate current
Max. peak negative
gate voltage
VGT Max. required DC gate
voltage to trigger
IGT Max. required DC gate
current to trigger
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
di/dt Max. rate of rise of
turned-on current
12 W tp 5ms, TJ = TJ max.
3 W f=50Hz, TJ = TJ max.
3 A tp 5ms, TJ = TJ max.
10 V
4 V TJ = - 40°C Anodesupply=6V,resistive
2.5 TJ = 25°C load;Ra=1
1.7 TJ = TJ max.
270 TJ = - 40°C Anodesupply=6V,resistive
150 mA TJ = 25°C load;Ra=1
80 TJ = TJ max.
0.3 V @ TJ = TJ max., rated VDRMapplied
10 mA
300 A/µs @TJ=TJmax.,ITM=400Arated VDRMapplied
Thermal and Mechanical Specifications
Parameter
IRK.136 IRK.142 IRK.162 Units Conditions
TJ
Tstg
RthJC
RthCS
T
wt
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
Max. thermal resistance,
case to heatsink
Mounting
IAP to heatsink
torque ± 10% busbar to IAP
Approximate weight
Case Style
-40 to 125
-40 to 150
0.18 0.18 0.16
0.05
4 to 6
4 to 6
200 (7.1)
New Int-A-Pak
°C
°C
K/W DC operation, per junction
K/W
Nm
g(oz)
Mounting surface smooth, flat and greased
Per module
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
Sinusoidal conduction @ TJ max.
180o
120o
90o
60o
30o
Rectangular conduction @ TJ max.
180o
120o
90o
60o
30o
Units
IRK.136
0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017
IRK.142
0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W
IRK.162
0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040
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IRKT142 電子部品, 半導体
IRK.136, .142, .162 Series
Bulletin I27117 rev. C 03/02
450
400
350
300
2 5 0 C onductio n Angle
200
150
100
50
180
120
0.16 K /W
90
60
0.25 K/W
30
0.4 K/W
0.6 K/W
IRK.136.. Series
Per Module
TJ = 12 5 C
1 K/W
0
0 50 100 150 200 250 300 25 50 75 100 125
Total RMS Output Current (A)
M axim um Allowable Am bient Tem perature ( C )
Fig.7 - On State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
1500
180
( S in e )
180
(Rect)
0
0.08 K
.12 K/W
/W
0.2 K/W
2 x IRK.136.. Series
Single Phase Bridge
C o n n ec te d
TJ = 125 C
0.35 K/W
0.6 K/W
5 5 11 0 1 6 5 2 2 0 207 5 25 5 0 7 5 1 0 0 1 2 5
Total O utput C urrent (A)
Maximum Allowable Am bient Temperature ( C)
Fig.8 - On State Power Loss Characteristics
1200
900
600
300
0
0
120
(R e c t)
0.08
0.1 K
K/W
/W
0.16 K/W
3 x IRK.136.. Series
Three Phase Bridge
C onnected
TJ = 125 C
0.25 K/W
0.4 K /W
1 K/W
100 200 300 400 25 50 75 100 125
Total Output Current (A)
M axim um Allowable Am bient Tem perature ( C )
Fig.9- On State Power Loss Characteristics
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部品番号部品説明メーカ
IRKT142

(IRKT136/142/162) THYRISTOR/DIODE and THYRISTOR/THYRISTOR

International Rectifier
International Rectifier


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