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IRKTF72 の電気的特性と機能

IRKTF72のメーカーはInternational Rectifierです、この部品の機能は「FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRKTF72
部品説明 FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRKTF72 Datasheet, IRKTF72 PDF,ピン配置, 機能
Bulletin I27104 rev. A 09/97
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.F72.. SERIES
INT-A-pakä Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
71 A
Major Ratings and Characteristics
Parameters
IRK.F72..
Units
I T(AV)
IT(RMS)
I TSM
I2t
@ TC
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I2t
71
90
158
2100
2200
21.6
19.8
216
A
°C
A
A
A
KA2s
KA2s
KA2s
tq
trr
VDRM / V RRM
TJ range
20 and 25
2
up to 1200
- 40 to 125
µs
µs
V
oC
www.irf.com
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IRKTF72 pdf, ピン配列
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
trr Maximum recovery time
tq Maximum turn-off time
IRK.F72.. Series
Bulletin I27104 rev. A 09/97
IRK.F72..
800
2
KJ
20 25
Units Conditions
A/µs
µs
µs
Gate drive 20V, 20, tr 1ms, VD= 80% VDRM
TJ = 125°C
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
I = 350A, T = 125°C, di/dt = -25A/µs,
TM J
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
dv/dt
VINS
I
RRM
IDRM
Maximum critical rate of rise of off-state
voltage
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
IRK.F72..
1000
Units Conditions
V/µs TJ = 125°C., exponential to = 67% VDRM
3000
30
V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
mA T = 125°C, rated V /V applied
J DRM RRM
Triggering
Parameter
PGM
P G(AV)
IGM
- VGM
IGT
V GT
I
GD
V GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F72..
60
10
10
5
200
3
20
0.25
Units Conditions
W f = 50 Hz, d% = 50
W TJ = 125°C, f = 50Hz, d% = 50
A TJ = 125°C, tp < 5ms
V
mA TJ = 25°C, Vak 12V, Ra = 6
V
mA T = 125°C, rated V applied
J DRM
V
Thermal and Mechanical Specifications
Parameter
IRK.F72..
T Max. junction operating temperature range
J
Tstg Max. storage temperature range
RthJC Max. thermal resistance, junction to
case
RthC-hs Max. thermal resistance, case to
heatsink
- 40 to 125
- 40 to 150
0.17
0.035
T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53)
busbar to IAP 4 - 6 (35 - 53)
wt Approximate weight
500 (17.8)
Units Conditions
°C
K/W Per junction, DC operation
K/W Mounting surface flat and greased
Per module
Nm
(lb*in)
g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
www.irf.com
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3Pages


IRKTF72 電子部品, 半導体
IRK.F72.. Series
Bulletin I27104 rev. A 09/97
140
180°
120 120°
90°
100 60°
30°
80
RMS Limit
60
Conduction Angle
40
IRK.F72.. Series
20 Per Ju nction
T J= 125°C
0
0 10 20 30 40 50 60 70 80
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
2000
1800
1600
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
IRK.F72.. Series
Per Junction
800
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1000
T J= 25°C
TJ= 125°C
IRK.F72.. Series
Per Junction
100
1 2 3 4 5 6 7 8 9 10
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
6
200
180 DC
180°
160 120°
90°
140 60°
120 30°
100
RMS Limit
80
60
40
20
0
0 20 40
Conduction Period
IRK.F72.. Series
Per Junction
T J = 125°C
60 80 100 120
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
2200
2000
1800
1600
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125°C
No Voltage Reapplied
Rated V RRMReapplied
1400
1200
1000 IRK.F72.. Series
Per Junction
800
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Steady State Value:
R thJC = 0.25 K/W
(DC Operation)
0.1
0.01
IRK.F72.. Series
Per Junction
0.001
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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共有リンク

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部品番号部品説明メーカ
IRKTF72

FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR

International Rectifier
International Rectifier


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