|
|
PDF UPA679TB Data sheet ( Hoja de datos )
| Número de pieza | UPA679TB | |
| Descripción | N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de UPA679TB (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA679TB
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
µ PA679TB
Marking: YA
PACKAGE
SC-88 (SSP)
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
654
123
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20 / −20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12 / m12
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (2 units) Note2
ID(DC)
ID(pulse)
PT
±0.35 / m0.25
±1.40 / m1.00
0.2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm
PIN CONNECTION (Top View)
654
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
123
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16615EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003
1 page  
µ PA679TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
Pulsed
1
VGS = 2.5 V, ID = 0.15 A
0.8
0.6
0.4
0.2
0
- 50
VGS = 4.0 V, ID = 0.30 A
VGS = 4.5 V, ID = 0.30 A
0 50 100
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
ID = 0.30 A
1 Pulsed
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
12
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1
TA = 125°C
0.8 75°C
25°C
0.6 −25°C
VGS = 4.5 V
Pulsed
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1
TA = 125°C
0.8 75°C
25°C
0.6 −25°C
VGS = 4.0 V
Pulsed
0.4
0.2
0
0.01
0.1 1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1 TA = 125°C
75°C
0.8
0.6
0.4
0.2
0
0.01
25°C
−25°C
VGS = 2.5 V
Pulsed
0.1 1
ID - Drain Current - A
10
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
100
VGS = 0 V
f = 1.0 MHz
C iss
10 C oss
C rss
1
0.1
1 10 100
VDS - Drain to Source Voltage - V
Data Sheet G16615EJ1V0DS
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet UPA679TB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA679TB | N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |