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STTA306BのメーカーはST Microelectronicsです、この部品の機能は「TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE」です。 |
部品番号 | STTA306B |
| |
部品説明 | TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTTA306Bダウンロード(pdfファイル)リンクがあります。 Total 8 pages
® STTA306B
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (typ)
VF (max)
3A
600 V
20 ns
1.65 V
FEATURES AND BENEFITS
SPECIFIC TO FREEWHEEL MODE OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST, AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
K
A
NC
DPAK
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all freewheel mode operations and
is particulary suitable and efficient in motor control
ABSOLUTE RATINGS (limiting values)
freewheel applications and in booster diode appli-
cations in Power Factor Control circuitries.
Packaged in DPAK, these 600V devices are par-
ticularly intended for use on 240V domestic mains.
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IFRM Repetitive peak forward current
tp=5 µs F=5 kHz square
IFSM Surge non repetitive forward current tp=10 ms sinusoidal
Tj Maximum operating junction temperature
Tstg Storage temperature range
TM : TURBOSWITCH is a trademark from STMicroelectronics
Value
600
6
20
35
125
- 65 to + 150
Unit
V
A
A
A
°C
°C
November 1999 - Ed: 3C
1/8
1 Page Fig. 1: Conduction losses versus average current.
P1(W)
3.0
2.5
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
2.0
δ=1
1.5
1.0
0.5
IF(av) (A)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
STTA306B
Fig. 2: Forward voltage drop versus forward
current (maximum values).
IFM(A)
5E+1
1E+1
1E+0
Tj=125°C
Tj=25°C
1E-1
VFM(V)
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 3: Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout).
Zth(j-a) (°C/W)
1E+0
δ = 0.5
δ = 0.2
1E-1 δ = 0.1
1E-2
Single pulse
1E-3
1E-3
1E-2
tp(s)
1E-1 1E+0
T
δ=tp/T
tp
1E+1 1E+2 5E+2
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence).
IRM(A)
9
VR=400V
8 Tj=125°C
7
6
IF=2*IF(av)
5
4 IF=IF(av)
3
2
1 dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
350
300
VR=400V
Tj=125°C
250
200
150
IF=2*IF(av)
100
50
0
0
dIF/dt(A/µs)
IF=IF(av)
20 40 60 80 100 120 140 160 180 200
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
S factor
1.6
1.4
1.2
IF<2*IF(av)
VR=400V
Tj=125°C
1.0
0.8
0.6
0.4
0.2
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
3/8
3Pages STTA306B
APPLICATION DATA (Cont’d)
Fig. B : STATIC CHARACTERISTICS
I
IF
Rd
VR
V
I R Vto V F
Conduction losses :
P1 = Vto x IF(AV) + Rd x IF2(RMS)
Reverse losses :
P2 = VR x IR x (1 - δ)
Fig. C : TURN-OFF CHARACTERISTICS
V
IL
TRANSISTOR
I
t
Turn-on losses :
(in the transistor, due to the diode)
P5 = VR
×
IRM 2 × (3 + 2 × S) × F
6 x dIF ⁄ dt
+ VR
×
IRM × IL × (S + 2) × F
2 × dIF ⁄ dt
I
dI F /dt
DIODE
V ta tb
I RM
dI R /dt
t
VR
trr = ta + tb S = tb / ta
I
dIF /dt = VR /L
RECTIFIER
OPERATION
V ta tb
IRM dIR /dt
trr = ta + tb
S = tb/ta
t
VR
6/8
Turn-off losses (in the diode) :
P3 = VR
× IRM 2 × S
6 x dIF ⁄ dt
×
F
P3 and P5 are suitable for power MOSFET and
IGBT
6 Page | |||
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部品番号 | 部品説明 | メーカ |
STTA306B | TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE | ST Microelectronics |