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Datasheet IRLL110 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRLL110 | Power MOSFET, Transistor PD - 90869A
IRLL110
HEXFET® Power MOSFET
l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching
D
VDSS = 100V RDS(on) = 0.54Ω
G S
ID = 1.5A
Description
Third Generation HEXFET | International Rectifier | mosfet |
2 | IRLL110 | Power MOSFET, Transistor www.vishay.com
IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.0 V
6.1 2.6 3.3 Single
0.54
D
SOT-223 D
S D G
Marking code: LB
G
S N-Channel MOSFET
FEATURES
• Surface mount
• Available in | Vishay | mosfet |
3 | IRLL110PBF | Power MOSFET, Transistor PD - 95222
IRLL110PbF
HEXFET® Power MOSFET
l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching Lead-Free
D
VDSS = 100V RDS(on) = 0.54Ω
G S
ID = 1.5A
Description
Third Gen | International Rectifier | mosfet |
IRL Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRL1004 | HEXFET Power MOSFET
PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 40V RDS(on) = 0.0065Ω
G
ID = 130A International Rectifier mosfet | | |
2 | IRL1004L | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
3 | IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
4 | IRL1004PBF | Power MOSFET, Transistor l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec International Rectifier mosfet | | |
5 | IRL1004S | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
6 | IRL1004SPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
7 | IRL1104 | HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
International Rectifier mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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