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PDF 2SK0615 Data sheet ( Hoja de datos )

Número de pieza 2SK0615
Descripción SILICON N-CHANNEL MOS FET
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SK0615 Hoja de datos, Descripción, Manual

Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(1.5)
6.9±0.1
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
VDS
80 V
Gate to Source voltage VGSO 20 V
Drain current
ID ±0.5 A
Max drain current
IDP ±1 A
Allowable power dissipation
PD*
1W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
55 to +150
°C
* PC board: Copper foil of the drain portion should have a area of 1cm2 or
more and the board thickness should be 1.7mm.
(0.85)
0.55±0.1
123
(2.5) (2.5)
0.45±0.05
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Drain to Source ON-resistance
Vth
RDS(on)*1
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*1, 2
Turn-off time
toff*1, 2
*1 Pulse measurement
*2 ton, toff measurement circuit
Vin = 10V
t = 1µS
f = 1MHZ
50
Vout
68
VDD = 30V
Vin
Vout
VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
10% Vin
90% Vout
ton
10%
90%
toff
min typ max Unit
10 µA
0.1 µA
80 V
1.5 3.5 V
2 4
300 mS
45 pF
30 pF
8 pF
15 ns
20 ns
Note) The part number in the parenthesis shows conventional part number.
1

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