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2N60B の電気的特性と機能

2N60BのメーカーはFairchild Semiconductorです、この部品の機能は「 SSW2N60B」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N60B
部品説明 SSW2N60B
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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2N60B Datasheet, 2N60B PDF,ピン配置, 機能
www.DataSheet4U.com
November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 2.0A, 600V, RDS(on) = 5.0@VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
SSW Series
GDS
I2-PAK
SSI Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SSW2N60B / SSI2N60B
600
2.0
1.3
6.0
± 30
120
2.0
5.4
5.5
3.13
54
0.43
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.32 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

1 Page





2N60B pdf, ピン配列
www.DataSheet4U.com
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100 6.0 V
5.5 V
Bottom: 5.0 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
18
15
V = 10V
GS
12
V = 20V
GS
9
6
3
Note : T = 25
J
0
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
iss
400
C
oss
200 Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100 150oC
10-1
2
25oC
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 120V
10 DS
VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 2.0 A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001


3Pages


2N60B 電子部品, 半導体
www.DataSheet4U.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

6 Page



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