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IRL3303SのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRL3303S |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRL3303Sダウンロード(pdfファイル)リンクがあります。 Total 10 pages
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3303S)
l Low-profile through-hole (IRL3303L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1323B
IRL3303S/L
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 0.026Ω
ID = 38A
S
D 2 Pak
T O -262
Max.
38
27
140
3.8
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page IRL3303S/L
1000
100
V GS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOT TOM 2.5V
1000
100
TOP
BOTT OM
V GS
15 V
1 2V
1 0V
8 .0 V
6 .0 V
4 .0 V
3 .0 V
2.5 V
10
1
0.1
0.1
2 .5V
20µs PULSE W IDTH
TJ = 25°C
A
1 10 100
VD S , Drain-to-S ource V oltage (V)
Fig 1. Typical Output Characteristics
10
2.5V
1
0.1
0.1
20µs PULSE W IDTH
TJ = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 1 75 °C
10
1
V DS= 15V
2 0µ s PU LSE W ID TH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Gate-to -Source Volta ge (V)
Fig 3. Typical Transfer Characteristics
2.0
ID = 34A
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRL3303S/L
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
300
ID
TOP 8.3A
14A
2 5 0 B OT TO M 20 A
200
150
100
50
0 VD D = 1 5V
25 50
75
100 125 150
A
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 10 ページ | ||
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PDF ダウンロード | [ IRL3303S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRL3303 | HEXFET POWER MOSFET | International Rectifier |
IRL3303L | HEXFET Power MOSFET | International Rectifier |
IRL3303LPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRL3303PBF | Power MOSFET ( Transistor ) | International Rectifier |