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IRL3716 の電気的特性と機能

IRL3716のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL3716
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL3716 Datasheet, IRL3716 PDF,ピン配置, 機能
PD - 94403A
SMPS MOSFET
IRL3716
IRL3716S
IRL3716L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Active Oring
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
4.0m
ID
180A†
TO-220AB
IRL3716
D2Pak
IRL3716S
TO-262
IRL3716L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case‡
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)…
Max.
20
± 20
180†
130
720
210
100
1.4
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
0.50
–––
–––
Max.
0.72
–––
62
40
Units
°C/W
Notes  through ‡ are on page 11
www.irf.com
1
10/8/04

1 Page





IRL3716 pdf, ピン配列
IRL3716/3716S/3716L
10000
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
10
1
0.1
2.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
10000
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
2.5V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 25°C
TJ = 175°C
2.0
I D = 180A
1.5
1.0
10.00
2.0
VDS = 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRL3716 電子部品, 半導体
IRL3716/3716S/3716L
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
1650
1320
990
TOP
BOTTOM
ID
29A
51A
72A
660
330
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 11 ページ
 
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Link :


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