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IRL3102のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRL3102 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRL3102ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
PRELIMINARY
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD- 9.1694A
IRL3102
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.013Ω
ID = 61A
S
TO-220AB
Max.
61
39
240
89
0.71
± 10
14
220
35
8.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97
1 Page IRL3102
1000
VVGGSS
TTOOPP
151V0V
11886.200..VV00VVV
64.0.0VV
43.0.0VV
BOTTOM32.0.5VV
BOTTOM 2.5V
100
2.5V
10
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VVGGSS
TTOOPP
151V0V
118.20860VV..00VVV
6.40.0VV
4.30.0VV
BOTTOM3.20.5VV
BOTTOM 2.5V
100
2.5V
10
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25 ° C
TJ = 150° C
10
V DS = 15V
20µs PULSE WIDTH
1
234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0 ID = 61A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRL3102
0.015
0.020
0.014
0.013
VGS = 4.5V
0.012
0.011
0.010
0
VGS = 7.0V
20 40 60
ID , Drain Current (A)
80
Fig 12. On-Resistance Vs. Drain Current
0.018
0.016
0.014
0.012
ID = 61A
0.010
0.008
0
2468
V G S , Gate-to-Source V oltage (V )
A
10
Fig 13. On-Resistance Vs. Gate Voltage
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ IRL3102 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRL3102 | Power MOSFET ( Transistor ) | International Rectifier |
IRL3102PBF | HEXFET Power MOSFET | International Rectifier |
IRL3102S | Power MOSFET ( Transistor ) | International Rectifier |
IRL3102SPBF | Power MOSFET ( Transistor ) | International Rectifier |