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H8NB90FI PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H8NB90FI
部品説明 STH8NB90FI
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 



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H8NB90FI Datasheet, H8NB90FI PDF,ピン配置, 機能
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STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1 - 8 A TO-247/ISOWATT218
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STW8NB90
900 V < 1.45
8A
STH8NB90FI
900 V < 1.45
5A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 8 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
July 2001
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW8NB90 STH8NB90FI
900
900
±30
85
53
32 20
200 80
1.6 0.64
4
- 2500
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/9

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