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Número de pieza | 2SK3456 | |
Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3456
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3456 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications such
as switching power supply, AC adapter.
FEATURES
• Low gate charge
QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 6.0 A)
• Avalanche capability ratings
• Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3456
TO-220AB
2SK3456-S
TO-262
2SK3456-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
500
±30
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±12
±36
Total Power Dissipation (TA = 25°C) PT1 1.5
Total Power Dissipation (TC = 25°C) PT2 100
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 12
EAS 103
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14753EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2000
1 page 2SK3456
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(DC)
10 RDS(on) Limited3 ms
ID(pulse)
PW
1
100
ms
µs
= 10 µs
10 ms
1
30 ms
100 ms
Power Dissipation Limited
TC = 25˚C
Single Pulse
0.1
1 10
100
VDS - Drain to Source Voltage - V
1000
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3˚C/W
10
1 Rth(ch-C) = 1.25˚C/W
0.1
0.01
0.001
10 µ 100 µ 1 m 10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D14753EJ1V0DS
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SK3456.PDF ] |
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