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PDF APM2007 Data sheet ( Hoja de datos )
| Número de pieza | APM2007 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM2007
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
20V/30A
,
RDS(ON)=6mΩ(typ.)
@
V =10V
GS
RDS(ON)=8mΩ(typ.) @ VGS=4.5V
RDS(ON)=16mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• TO-252 Package
Applications
123
GD S
Top View of TO-252
D
• Power Management in Computer, Portable
Equipment and Battery Powered Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
APM2007N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150°C
Handling Code
TR : Tape & Reel
APM2007N U :
APM2007N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
20
±16
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
1
www.anpec.com.tw
1 page  
APM2007
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
1 TJ=150°C
TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
250
200
150
100
50
0
1E-3 0.01
0.1 1 10
Time (sec)
100 1000
Normalized Thermal Transient Impedence, Junction to Ambient
1 Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1 D=0.02
D=0.01
SINGLE PULSE
0.01
1E-4
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
0.01 0.1 1 10
Square Wave Pulse Duration (sec)
100 1000
Copyright ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM2007.PDF ] | |
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