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Datasheet MTP10N10E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MTP10N10E | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP10N10E/D
TMOS IV Power Field Effect Transistor
This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer d |
 Motorola Semiconductors |
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| 4 | MTP10N10E | Power MOSFET ( Transistor ) ( DataSheet : )
MTP10N10E
Preferred Device
Power MOSFET 10 Amps, 100 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain–to–source diodes with fast recovery t |
 ON Semiconductor |
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| 3 | MTP10N10E | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220 Rail |
 New Jersey Semiconductor |
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| 2 | MTP10N10EL | TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP10N10EL/D
™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP10N10EL
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand hig |
Motorola Semiconductors |
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