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PDF 2SK3471 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3471 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3471
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3471
Switching Regulator and DC-DC Converter Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.)
· High forward transfer admittance: |Yfs| = 0.4 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Thermal Characteristics
Rating
500
500
±30
0.5
1.5
0.5
1.5
14.3
0.5
0.05
150
-55 to150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Marking
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
250 °C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm ´ 25.4 mm ´ 0.8 mm)
Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 W, IAR =
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
ZG
(The two digits represent the
part number.)
1 2002-09-04
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3471.PDF ] | |
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