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PDF IRF6216PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6216PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
PD - 95293
IRF6216PbF
Applications
l Reset Switch for Active Clamp Reset
DC-DC converters
l Lead-Free
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
-150V 0.240W@VGS =-10V -2.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
l Fully Characterized Capacitance Including S
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
G
and Current
18
27
36
45
Top View
A
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-2.2
-1.9
-19
2.5
0.02
± 20
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/06/05
1 page  
IRF6216PbF
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100
TC , Case Temperature ( °C)
125
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF6216PBF.PDF ] | |
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