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PDF HXTR-4101 Data sheet ( Hoja de datos )
| Número de pieza | HXTR-4101 | |
| Descripción | NPN Silicon RF Transistor | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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HXTR 4101
NPN SILICON RF TRANSISTOR
PACKAGE STYLE
DESCRIPTION:
The HXTR4101 is a Common Base
Device Designed for Oscillator
Applications up to 10 GHz.
MAXIMUM RATINGS
IC 70 mA
VEBO
1.5 V
VCEO
TJ
TSTG
PT
20 V
300 OC
-65 OC to 250 OC
900 mW @ TC = 25 OC
DIMENSIONS IN MILLIMETERS
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
BVCES
IC = 100 µA
30
ICEO
VCE = 15 V
500
ICBO
VCB = 15 V
hFE
ww Posc
w.DN/C
VCE = 15 V
IC = 15 mA
VCB = 15 V
IC = 30mA
IC = 30 mA
IC = 30 mA
IC = 30 mA
PHASE NOISE TO CARRIER @ 1.0 KHz
FROM THE CARRIER(SSB)
f = 3.0 GHz
f = 4.3 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.3 GHz
50
19
125
21.5
20.5
17
12
-50
ataSheet4U.cA D V A N C E D S E M I C O N D U C T O R, I N C.
om7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
100
200
UNITS
V
µA
µA
---
dBm
dBc/Hz
REV. B
1/1
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