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PDF P4NB100 Data sheet ( Hoja de datos )
| Número de pieza | P4NB100 | |
| Descripción | STP4NB100 | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P4NB100 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STP4NB100
® STP4NB100FP
N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P4NB1 00
1000 V
STP4NB100FP 1000 V
< 4.4 Ω
< 4.4 Ω
3.8 A
3.8 A
s TYPICAL RDS(on) = 4 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Ts tg Storage Temperat ure
Tj Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
Va l u e
Un it
STP4NB100 ST P4NB100F P
1000
V
1000
V
± 30
V
3.8
3.8(*)
A
2.4
2.4(*)
A
15.2
15.2
A
125 40 W
1
0.32
W /o C
4 4 V/ns
2000
-65 to 150
150
( 1) ISD ≤ 3.8A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
oC
oC
1/9
1 page  
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Gate Charge vs Gate-source Voltage
STP4NB100/STP4NB100FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P4NB100.PDF ] | |
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