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IRFL110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFL110
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFL110 Datasheet, IRFL110 PDF,ピン配置, 機能
PD - 90861A
IRFL110
HEXFET® Power MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
G
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
ID @ Tc = 25°C
ID @ Tc = 100°C
IDM
PD @Tc = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current 
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
D
VDSS = 100V
RDS(on) = 0.54
ID = 1.5A
S
S O T -2 2 3
Max.
1.5
0.96
12
3.1
2.0
0.025
0.017
-/+20
150
1.5
0.31
5.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
–––
–––
** When mounted on 1'' square pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
Max.
40
60
Units
°C/W
1
1/28/99

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