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IRFL1006 の電気的特性と機能

IRFL1006のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFL1006
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFL1006 Datasheet, IRFL1006 PDF,ピン配置, 機能
PD - 91876
IRFL1006
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
D
VDSS = 60V
RDS(on) = 0.22
ID = 1.6A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.3
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
Parameter
Typ.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
3/29/99

1 Page





IRFL1006 pdf, ピン配列
IRFL1006
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 25° C
TJ = 150 ° C
1
0.1
4.0
V DS= 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 1.6A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFL1006 電子部品, 半導体
IRFL1006
15V
VDS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
D R IV E R
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
140
ID
TOP
0.72A
120 1.0A
BOTTOM 1.6A
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFL1006

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRFL1006

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRFL1006PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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