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IRFL014N の電気的特性と機能

IRFL014NのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFL014N
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFL014N Datasheet, IRFL014N PDF,ピン配置, 機能
PD- 92003A
IRFL014N
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
D
VDSS = 55V
RDS(on) = 0.16
ID = 1.9A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
Parameter
Typ.
Max.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/19/00

1 Page





IRFL014N pdf, ピン配列
1 0 0 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
100 VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
IRFL014N
1
4.5V
0.1
0.1
20µs PULSE W IDTH
TC = 2 5°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1 4.5V
0.1
0.1
20µs PULSE W IDTH
TJ = 150°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25 °C
1
VDS = 25V
20µs PULSE W IDTH
0.1 A
456789
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 1.7A
1.5
1.0
0.5
0.0
-60
VGS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFL014N 電子部品, 半導体
IRFL014N
15V
VDS
L
D RIVER
RG
20V
tp
D .U.T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
120
ID
TOP 1.5A
2.7A
100 BO TTO M 3.4A
80
60
40
20
0 VDD = 25V
A
25 50 75 100 125 150
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
6 www.irf.com

6 Page



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共有リンク

Link :


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Power MOSFET ( Transistor )

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IRFL014N

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