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Datasheet 17N80C2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 17N80C2 | SPP17N80C2
Preliminary data
SPP17N80C2 SPB17N80C2
Cool MOS™ Power Transistor
Feature
· · · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra |  Infineon Technologies | data |
| 2 | 17N80C2 | SPP17N80C2
Preliminary data
SPP17N80C2 SPB17N80C2
Cool MOS™ Power Transistor
Feature
· · · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra | Infineon Technologies | data |
17N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 17N40 | FQP17N40 A3977 Microstepping DMOS Driver with Translator
Features and Benefits
▪ ±2.5 A, 35 V output rating ▪ Low rDS(on) outputs, 0.45 Ω source, 0.36 Ω sink typical ▪ Automatic current decay mode detection/selection ▪ 3.0 to 5.5 V logic supply voltage range ▪ Mixed, fast, and slow current decay  Fairchild Semiconductor data | | |
| 2 | 17N40K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
17N40K-MT
Preliminary
17A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis  Unisonic Technologies mosfet | | |
| 3 | 17N50K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
17N50K-MT
Preliminary
17A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 17N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis Unisonic Technologies mosfet | | |
| 4 | 17N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
17N60
·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·A  Inchange Semiconductor mosfet | | |
| 5 | 17N80C2 | SPP17N80C2
Preliminary data
SPP17N80C2 SPB17N80C2
Cool MOS™ Power Transistor
Feature
· · · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra Infineon Technologies data | | |
| 6 | 17N80C2 | SPP17N80C2
Preliminary data
SPP17N80C2 SPB17N80C2
Cool MOS™ Power Transistor
Feature
· · · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra Infineon Technologies data | | |
| 7 | 17N80C3 | SPP17N80C3 - 800V, CoolMOS Power Transistor CoolMOS® Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance Infineon Technologies data | |
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