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PDF BUP311D Data sheet ( Hoja de datos )
| Número de pieza | BUP311D | |
| Descripción | IGBT With Antiparallel Diode Preliminary data sheet | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Infineon
BUP 311D
IGBT With Antiparallel Diode
Preliminary data sheet
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Former Development ID: BUP 3JKD
Type
BUP 311D
VCE IC
1200V A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 100 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
Diode forward current
TC = 100 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
CO6N70R7E8Q-AU4E1S0T2
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Values
1200
Unit
V
1200
± 20
20
12
A
40
tbd
tbd
125
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
May-06-1999
1 page  
Infineon
BUP 311D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
130
W
110
P
tot
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
22
A
18
I
C
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 2
A
IC
10 1
tp = 15.0µs
100 µs
10 0
1 ms
10 -1
10 0
10 1
10 2
10 ms
DC10 3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
K/W
ZthJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
5
May-06-1999
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUP311D.PDF ] | |
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